50+ indigenously designed and qualified microwave monolithic integrated circuits spanning L-Band to Ka-Band — engineered for aerospace, defence, and space applications.
LNAGaAs
Ultra-low noise figure GaAs MMIC LNA designed for X-Band radar receiver front-ends. Suitable for AESA T/R modules and EW receiver chains.
LNAInP
InP HEMT-based LNA for satellite receiver applications. ISRO STTL qualified, radiation-hardened to 100 krad TID. Used in ISRO ground stations and satellite payloads.
Power AmpGaN
High-efficiency GaN HEMT power amplifier for X-Band radar transmitters and EW jamming systems. Delivers industry-leading power density with thermal management features.
Power AmpGaN
Wide-bandwidth GaN SSPA module for C-Band radar and satellite uplink applications. Designed for continuous-wave and pulsed operation with high duty cycle capability.
Phase ShifterGaAs
5-bit digitally controlled phase shifter for AESA T/R module beamforming networks. Low insertion loss, high phase accuracy, and single-supply operation.
SwitchGaAs
SP4T absorptive switch for Ku-Band frequency agile systems, multiport radar front-ends, and electronic warfare receivers requiring low-loss wideband switching.
AttenuatorGaAs
6-bit GaAs digital attenuator for AGC loops, T/R module power control, and wideband radar receivers. Excellent amplitude accuracy and low phase variation with attenuation state.
MixerGaAs
Broadband double-balanced mixer for C-Band up/down conversion in radar receivers and satellite transponders. High LO-RF isolation and excellent spurious performance.
LNAInP
High-gain InP HEMT LNA for Ka-Band satellite communication terminals, airborne electronic intelligence receivers, and next-generation mmWave systems.
The industry workhorse for microwave MMICs. Excellent noise performance, high gain, and mature process control. ICON's largest product family. Suitable for most radar and EW applications.
The power technology of choice for next-generation radar, EW, and SATCOM amplifiers. ICON's GaN HEMT designs deliver 5–10× higher power density versus GaAs with excellent thermal management.
The low-noise champion. InP HEMT technology delivers the lowest achievable noise figures — essential for space receiver LNAs, millimetre-wave imaging, and strategic ELINT systems.
Our design team can take your specification from concept to qualified hardware — on GaAs, GaN, or InP processes. Send us your requirements and we'll respond within 48 hours.